JPH0226781B2 - - Google Patents
Info
- Publication number
- JPH0226781B2 JPH0226781B2 JP58162044A JP16204483A JPH0226781B2 JP H0226781 B2 JPH0226781 B2 JP H0226781B2 JP 58162044 A JP58162044 A JP 58162044A JP 16204483 A JP16204483 A JP 16204483A JP H0226781 B2 JPH0226781 B2 JP H0226781B2
- Authority
- JP
- Japan
- Prior art keywords
- impurity
- substrate
- layer
- implanted
- effect transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
- H10D62/854—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs further characterised by the dopants
Landscapes
- Junction Field-Effect Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58162044A JPS6054479A (ja) | 1983-09-05 | 1983-09-05 | 電界効果トランジスタの製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58162044A JPS6054479A (ja) | 1983-09-05 | 1983-09-05 | 電界効果トランジスタの製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6054479A JPS6054479A (ja) | 1985-03-28 |
| JPH0226781B2 true JPH0226781B2 (en]) | 1990-06-12 |
Family
ID=15747021
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58162044A Granted JPS6054479A (ja) | 1983-09-05 | 1983-09-05 | 電界効果トランジスタの製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6054479A (en]) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5229637A (en) * | 1988-03-14 | 1993-07-20 | Kabushiki Kaisha Toshiba | Semiconductor device |
| US5153703A (en) * | 1988-03-14 | 1992-10-06 | Kabushiki Kaisha Toshiba | Semiconductor device |
| JP2773425B2 (ja) * | 1990-11-21 | 1998-07-09 | 日本電気株式会社 | 電界効果トランジスタの製造方法 |
-
1983
- 1983-09-05 JP JP58162044A patent/JPS6054479A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6054479A (ja) | 1985-03-28 |
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